QPA1003P
1 - 8 GHz, 10 Watt GaN Power Amplifier
Qorvo's QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003P operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
The QPA1003P is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 1 - 8GHz
- PSAT: 40dBm
- PAE: 30 %
- Small Signal Gain: 30dB
- Return Loss: 11dB
- Bias: VD = 28V, IDQ = 650mA, VG = -2.2V Typical
- Package Dimensions: 5 x 6 x 1.76 mm
Typical Applications
- Electronic Warfare (EW)
- Radar
- Communications
- Test Instrumentation
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
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