QPA1006D
10.7 - 12.7 GHz, 35 Watt GaN Amplifier
Qorvo's QPA1006D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 - 12.7 GHz, the QPA1006D provides > 35 Watts of saturated output power and > 17 dB of large-signal gain while achieving > 39% power-added efficiency.
The QPA1006D RF input port is DC coupled to ground for optimum ESD performance. The QPA1006D RF ports have DC blocking capacitors and are matched to 50 ohms.
The QPA1006D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 10.7 - 12.7 GHz
- PSAT (PIN=29 dBm): > 46 dBm
- PAE (PIN=29 dBm): > 39 %
- Power Gain (PIN=29 dBm): > 17 dB
- Small Signal Gain: > 21.5 dB
- Bias: VD = 20 V, IDQ = 1200 mA
- Die Dimensions: 6.09 x 4.24 x 0.10 mm
Typical Applications
- Satellite Communications
- Radar
- Point to Point Communications
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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