QPA1009D

10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier

Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency.

The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms.

The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.

Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Production
i
Product Data SheetRev D – 01/2021
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Key Features

  • Frequency Range: 10.7 - 12.7 GHz
  • PSAT (PIN=27 dBm): > 43.5 dBm
  • PAE (PIN=27 dBm): > 40 %
  • Power Gain (PIN=27 dBm): > 17 dB
  • Small Signal Gain: > 22 dB
  • Bias: VD = 20 V, IDQ = 600 mA
  • Die Dimensions: 3.16 x 4.24 x 0.10 mm

Typical Applications

  • Satellite Communications
  • Radar
  • Point to Point Communications

Parameters

Frequency Min (GHz)
10.7
Frequency Max (GHz)
12.7
Psat (dBm)
43.5
Gain (dB)
17
PAE (%)
40
Vd (V)
20
Package Type
Die
Package Size (mm)
3.16 x 4.24 x 0.10
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
ITAR Restricted
No
ECCN
3A001.B.2.B.2

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