QPA2211D
27.5 - 31 GHz, 14 Watt GaN Amplifier
Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 5 W linear power with -25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%.
QPA2211D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2211D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 27.5 - 31 GHz
- PSAT (PIN=24 dBm): > 41.5 dBm
- PAE (PIN=24 dBm): > 34%
- Power Gain (PIN=24 dBm): > 17 dB
- IMD3 (at 34 dBm/tone): < -25 dBc
- Small Signal Gain: > 26 dB
- Bias: VD = 22 V, IDQ = 280 mA
- Die Dimensions: 2.740 x 2.552 x 0.050 mm
Typical Applications
- Communications
- Point to point communications
- Space communications
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NotePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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