QPA2612
8 - 12 GHz, 12 Watt X-Band GaN Power Amplifier
Qorvo's QPA2612 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8 - 12 GHz, the QPA2612 provides > 12 W of saturated output power and 23 dB of large-signal gain while achieving an impressive 40% power-added efficiency.
Packaged in a small 5 x 5 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar applications is easily supported. RF input and output ports are matched to 50Ω and are DC grounded. QPA2612 is part of a three-amplifier family and is pin compatible to QPA2610 and QPA2611.
Lead-free and RoHS compliant.
Key Features
- Frequency Range: 8.0 - 12.0 GHz
- Output Power (PIN = 18 dBm): > 41 dBm
- PAE (PIN = 18 dBm): > 40 %
- Small Signal Gain: > 34 dB
- Input Return Loss: > 16 dB
- Output Return Loss: > 4 dB
- Recommended Bias: VD = 24 V, IDQ = 250 mA
- Package Size: 5.0 mm x 5.0 mm x 0.85 mm
Typical Applications
- Radar
- Communications
- Satcom
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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