QPA3055P
2.9 - 3.5 GHz, 100 Watt S-Band GaN Power Amplifier
Qorvo's QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.5 GHz, the QPA3055P provides 100 W of saturated output power and 25 dB of large-signal gain while achieving 53% power-added efficiency.
The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations.
Lead-free and RoHS compliant.
Evaluation board available on request.
Key Features
- Frequency Range: 2.9 – 3.5 GHz
- PSAT (PIN=25 dBm): 50 dBm
- PAE (PIN=25 dBm): > 53 %
- Power Gain (PIN=25 dBm): 25 dB
- Bias: VD = 30 V, IDQ = 300/1500 mA, VG = -2.5 V typical
- Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10%
Typical Applications
- Radar
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication of Arctic Silver 5 Thermal Compound and Indium Shims for Qorvo CP-style Packaged Components
Application NoteQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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