QPA4446D
37.5 - 42.5 GHz 4 Watt GaN Amplifier
Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency.
To simplify system integration, the QPA4446D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. Its RF input port is DC coupled to ground for optimum ESD performance.
The QPA4446D is ideal for supporting communications and radar applications in both commercial and military markets.
The QPA4446D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Key Features
- Frequency Range: 37.5 - 42.5 GHz
- PSAT (PIN = 22 dBm): 36 dBm
- PAE( PIN = 22 dBm): 25%
- IMD3 (POUT/TONE = 30 dBm): -25 dBc
- Small Signal Gain: 18 dB
- Bias: VD = 24 V, IDQ = 70 mA, VG = -2.3 V typical range
- Dimensions: 3.26 x 1.49 x 0.05 mm
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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