QPD0005

2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor

The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation.

Lead free and RoHS compliant.

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Data sheet available upon request.
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Product Data SheetRev G – 06/2021
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Key Features

  • Operating Frequency Range: 2.5 - 5.0 GHz
  • Operating Drain Voltage: +48 V
  • Maximum Output Power (PSAT) at 3.6 GHz: 8.7 W
  • Maximum Drain Efficiency at 3.6 GHz: 72.9%
  • Efficiency-Tuned P3dB Gain at 3.6 GHz: 18.8 dB
  • 4.5 x 4.0 mm DFN Package

Typical Applications

  • WCDMA / LTE
  • Macrocell Base Station
  • Microcell Base Station
  • Small Cell
  • Active Antenna
  • 5G Massive MIMO
  • General Purpose Applications

Parameters

Frequency Min (MHz)
2,500
Frequency Max (MHz)
5,000
Type
Un-matched
Gain (dB)
18.8
Psat (dBm)
39.4
PAE (%)
N/A
Vd (V)
48
Package Type
DFN
Package Size (mm)
4.5 x 4.0
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
ITAR Restricted
No
ECCN
EAR99

Technical Documents

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