QPD0005M
6 Watt, 48 Volt, 2.5 - 5.0 GHz, GaN RF Transistor
The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 5.9 W at +48 V operation.
Lead free and RoHS compliant.
Contact your local sales representative for assistance.
Key Features
- Operating Frequency Range: 2.5 - 5.0 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT) at 3.6 GHz: 37.7dBm
- Maximum Drain Efficiency at 3.6 GHz: 74.1%
- Efficiency-Tuned P3dB Gain at 3.6 GHz: 18.6 dB
- 4.5 x 4.0 mm DFN Package
Typical Applications
- WCDMA / LTE
- Macrocell Base Station
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
- General Purpose Applications
Parameters
Technical Documents
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