QPD0020
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.
The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.
The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Key Features
- Operating Frequency Range: 4400 - 5000 MHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT): 34.7 W
- Maximum Drain Efficiency: 77.8%
- Efficiency-Tuned P3 dB Gain: 18.8 dB
Typical Applications
- W-CDMA / LTE
- Macrocell Base Station Driver
- Microcell Base Station
- Small Cell Final Stage
- Active Antenna
- Land Mobile and Military Radio Communications
- General Purpose Applications
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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