QPD0060
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.
The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier.
The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency range: DC to 3.6 GHz
- Drain voltage: 48V
- Output power (P3dB): 90W
- Maximum drain efficiency: 73%
- 7.2 x 6.6 mm DFN
Typical Applications
- Active Antennas
- Macro Cell Base Station
- Micro Cell Base Station
- Wireless Communications
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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