QPD1003
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET
Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency range: 1.2 - 1.4 GHz
- Output power (P3dB): 540 W at 1.3 GHz
- Linear gain: 19.9 dB typical at 1.3 GHz
- Typical PAE3dB: 66.7% at 1.3 GHz
- Operating voltage: 50V
- Low thermal resistance package
- Pulse capable
Typical Applications
- Civilian Radar
- Military Radar
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteRF565 Package Mounting - Mechanical Mounting and PCB Considerations
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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