QPD1004
30 - 1200 MHz, 25 Watt, 50 Volt GaN RF Input-Matched Transistor
The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 6 x 5 mm surface mount DFN package.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
Last Time Buy: July 31, 2024
Recommended replacement for new designs: QPD1004A
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 30 - 1200 MHz
- Output Power (P3dB): 40 W at 1 GHz
- Linear Gain: 20.8 dB typical at 1 GHz
- Typical PAE3dB: 73.2 % at 1 GHz
- Operating voltage: 50V
- Low thermal resistance package
- CW and Pulse capable
- 6 x 5 mm package
Typical Applications
- Military Radar
- Commercial Radar
- Land Mobile and Military Radio Communications
- Active Antennas
- Base Stations
- Jammers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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