QPD1006
1.2 - 1.4 GHz, 450 Watt, 50 Volt, GaN IMFET
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and CW operations.
ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 1.2 - 1.4 GHz
- Output Power (P3dB): 313 W (CW), 468 W (Pulsed) at 1.3 GHz
- Linear Gain: 17.5 dB (CW), 17.8 dB (Pulsed) at 1.3 GHz
- Typical DEFF3dB (CW): 55% (CW), 62.2% (Pulsed) at 1.3 GHz
- Operating voltage: 45V (CW), 50 V (Pulsed)
- Low thermal resistance package
- CW and Pulse capable
Typical Applications
- Military Radar
- Civilian Radar
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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