QPD1013
DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.
The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
Key Features
- Frequency Range: DC - 2.7 GHz
- Output Power (P3dB): 178 W at 1.8 GHz
- Linear Gain: 21.8 dB typical at 1.8 GHz
- Typical PAE3dB: 64.8 % at 1.8 GHz
- Operating voltage: 65V
- Low thermal resistance package
- CW and Pulse capable
- 7.2 x 6.6 mm package
Typical Applications
- Military Radar
- Commercial Radar
- Land Mobile and Military Radio Communications
- Active Antennas
- Base Stations
- Jammers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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