QPD1014
15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Last Time Buy: July 31, 2024
Recommended replacement for new designs: QPD1014A
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 0.03 - 1.2 GHz
- Output Power (P3dB): 12.5 W at 1 GHz
- Linear Gain: 18.4 dB typical at 1 GHz
- Typical PAE3dB: 69.5% at 1 GHz
- Operating Voltage: 50V
- Low Thermal Resistance Package
- CW and Pulse Capable
- 6 x 5 mm Package
Typical Applications
- Military radar
- Commercial radar
- Land mobile and military radio communications
- Active Antenna
- Basestation
- Jammers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication Note: Understanding Thermal Analysis of RF Devices
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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