QPD1016
DC - 1.7 GHz, 500 Watt, 50 Volt, GaN RF Transistor
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.
ROHS compliant.
Evaluation boards are available upon request.
Key Features
- Frequency Range: DC - 1.7 GHz
- Output Power (P3dB): 680 W at 1.3 GHz
- Linear Gain: 23.9 dB typical at 1.3 GHz
- Typical PAE3dB: 77.4% at 1.3 GHz
- Operating Voltage: 50 V
- Low Thermal Resistance Package
- CW and Pulse Capable
Typical Applications
- IFF
- Avionics
- Military and Civilian Radar
- Test Instrumentation
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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