QPD1019
500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET
The QPD1019 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Last Time Buy: August 31, 2024
For recommended replacement part for new designs, please Contact Qorvo.
Key Features
- Frequency Range: 2.9 - 3.3 GHz
- Output Power (P3dB): 590 W at 3.1 GHz
- Linear Gain: 15.5 dB typical at 3.1 GHz
- Typical PAE3dB: 67% at 3.1 GHz
- Operating Voltage: 50V
- Low Thermal Resistance Package
- Pulse Capable
Typical Applications
- Commercial Radar
- Military Radar
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteRF565 Package Mounting - Mechanical Mounting and PCB Considerations
Application NoteQorvo Field-Proven GaN Solutions
BrochureQorvo Launches Compact GaN Power Amplifiers for Advanced Radar Systems
News Release
Design Resources
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