QPD1020
30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor
The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Last Time Buy: March 29, 2024
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 2.7 - 3.5 GHz
- Output Power (P3dB): 31 W at 3.1 GHz
- Linear Gain: 18.4 dB typical at 3.1 GHz
- Typical PAE3dB: 64% at 3.1 GHz
- Operating Voltage: 50V
- Low Thermal Resistance Package
- CW and Pulse Capable
- 6 x 5 mm Package
Typical Applications
- Military Radar
- Civilian Radar
- Test Instrumentation
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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