QPD1025
960 - 1215 MHz, 1800 Watt, 65 Volt, GaN RF Input-Matched Transistor
The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: .96 to 1.215 GHz
- Output Power (P3dB1): 1862 Watt
- Linear Gain: 22.5 dB
- Typical PAE3dB1: 77.2 %
- Operating voltage: 65 V
- CW and Pulse capable
Typical Applications
- IFF Transponders
- Avionics
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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