QPD1025L
960 - 1215 MHz, 1800 Watt, 65 Volt, GaN RF Input-Matched Transistor
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: .96- 1.215 GHz
- Output Power (P3dB1): 1862 Watt
- Linear Gain1: 22.5 dB
- Typical PAE3dB1 77.2 %
- Operating voltage: 65 V
- CW and Pulse capable
Typical Applications
- IFF Transponders
- Avionics
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
- Load Pull Data
Load Pull Data @ 50V
Load Pull Data - Load Pull Data
Load Pull Data @ 65V
Load Pull Data - Non-Linear Model
Modelithics Non-Linear Model
Non-Linear Model - PCB Layout Files
Gerber PCB Layout Files
PCB Layout Files - S-Parameters
S-Parameters
S-Parameters - Video
Qorvo® Instructional Video: Understanding GaN Thermal Analysis
Video
Related Solutions
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