QPD1028L
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
Key Features
- Operating Frequency Range: 1.2 - 1.4 GHz
- Saturated Output Power PSAT: 59dBm
- Drain Efficiency at PSAT: 70%
- Large Signal Gain at PSAT: 18 dB
- Bias: VDS=+65V, IDQ=750mA
- Package Type: NI-780
- Package Dimensions: 20.57 x 9.78 x 3.63 mm
Typical Applications
- L-Band Radar
- ISM
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication Note: Understanding Thermal Analysis of RF Devices
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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