QPD1029L
1.2 - 1.4 GHz, 1500 Watt, 65 Volt, GaN RF Input-Matched Transistor
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 1.2 - 1.4 GHz
- Output Power (P3dB): 1500 W at 1.3 GHz
- Linear Gain: 21.3 dB typical at 1.3 GHz
- Typical PAE3dB: 75 % at 1.3 GHz
- Operating voltage: 65 V
- Low thermal resistance package
- CW and Pulse capable
Typical Applications
- L-Band radar-amplifier application
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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