QPD1425L
1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN on SiC RF Transistor
The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
Last Time Buy: May 3, 2024
Recommended replacement for new designs: QPD1426, QPD1426L
Contact your local sales representative for assistance.
Key Features
- Operating Frequency Range: 1.2 - 1.4 GHz
- Saturated Output Power PSAT: 56.3dBm
- Drain Efficiency at PSAT: 75%
- Large Signal Gain at PSAT: 17 dB
- Bias: VDS = +65V, IDQ = 430 mA
- Package Type: NI-400
- Package Dimensions: 10.16 x 10.16 x 4.06 mm
Typical Applications
- L-Band Radar
- ISMe
Parameters
Technical Documents
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