QPD1823
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor.
The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD1823 can deliver PSAT of 227 W at 48 V operation.
Lead-free and ROHS compliant.
Last Time Buy: September 13, 2021
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Key Features
- Frequency range: 1.8-2.4 GHz
- Drain voltage: 48V
- Output power (P3dB): 227W
- Maximum drain efficiency: 77.5%
- Efficiency-tuned P3dB gain: 21.7dB
- NI-400 package
Typical Applications
- Active Antennas
- Micro Cell Base Station
- Macro Cell Base Station
- Wireless Communications
Parameters
Technical Documents
Design Resources
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