QPD1881L
400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor
The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for civilian radar, weather radar and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Last Time Buy: February 3, 2024
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 2.7 - 2.9 GHz
- Output Power (P3dB): 427 W at 2.9 GHz
- Linear Gain: 21.2 dB typical at 2.9 GHz
- Typical PAE3dB: 75.1 % at 2.9 GHz
- Operating voltage: 50 V
- Low thermal resistance package
- CW and Pulse capable
Typical Applications
- Civilian Radar
- Weather Radar
- Test Instrumentation
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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