QPD2195

400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor

The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor.

The QPD2195 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

QPD2195 can deliver P3dB of 400 W at +48 V operation.

Lead-free and ROHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Discontinued
i
End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
Product Data SheetRev C
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Key Features

  • Frequency Range: 1.8-2.2 GHz
  • Operating Drain Voltage: +48 V
  • Maximum Output Power (PSAT): 400 W
  • Maximum Drain Efficiency: 75.4%
  • Efficiency-Tuned P3dB Gain: 19.1 dB
  • 2-lead, earless, ceramic flange NI780 package

Typical Applications

  • Active Antenna
  • Macrocell Base Station, B3-B1
  • W-CDMA / LTE

Parameters

Frequency Min (MHz)
1,800
Frequency Max (MHz)
2,200
Gain (dB)
19.1
Psat (dBm)
56
Vd (V)
48
Package Type
NI-780
RoHS
Yes
Lead Free
Yes
Halogen Free
No
ITAR Restricted
No

Technical Documents

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Design Resources

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