QPD2796
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.
The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2796 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant
Last Time Buy: December 25, 2021
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Key Features
- Frequency range: 2.5-2.7GHz
- Drain voltage: 48V
- Output power (P3dB): 200W
- Maximum drain efficiency: 72%
- Efficiency-Tuned P3dB gain: 20dB
Typical Applications
- Active Antennas
- Micro Cell Base Station
- Macro Cell Base Station
- Wireless Communications
Parameters
Technical Documents
Design Resources
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