T2G6000528-Q3
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Key Features
- Frequency: DC to 6 GHz
- Linear Gain: 17 dB at 3.3 GHz
- Operating Voltage: 28 V
- Output Power (P3dB): 10 W at 3.3 GHz
- Lead-free and RoHS compliant
- Low thermal resistance package
Typical Applications
- Cellular Infrastructure
- General Purpose RF Power
- Jammers
- Professional Radio Systems
- Radar
- Test Instrumentation
- Wideband and Narrowband Defense and Commercial Communication Systems
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication Note: Understanding Thermal Analysis of RF Devices
Application NoteBill Of Materials
Bill of MaterialsHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
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