T2G6003028-FS
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Key Features
- Frequency: DC to 6 GHz
- Output Power (P3dB): 30 W at 6 GHz
- Linear Gain: >14 dB at 6 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
Typical Applications
- Civilian Radar
- Communication Systems
- Jammers
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteBill of Materials
Bill of MaterialsModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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