TGA2222
32 - 38 GHz 10 Watt GaN Amplifier
Qorvo's TGA2222 is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 32 - 38 GHz, the TGA2222 provides 40 dBm (10 W) of saturated output power and 16 dB of large-signal gain while achieving > 22% power-added efficiency.
The TGA2222 employs a balanced architecture to minimize performance sensitivity to load variation. Its RF ports are DC coupled to ground for optimum ESD performance.
The TGA2222 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The TGA2222 can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 32 – 38 GHz
- PSAT (PIN = 24 dBm): > 40 dBm
- PAE (PIN = 24 dBm): > 22 %
- Power Gain (PIN = 24 dBm): > 16 dB
- Small Signal Gain: > 25 dB
- Bias (pulsed): VD = 26 V, IDQ = 640 mA
- Bias (CW): VD = 24 V, IDQ = 640 mA
- Die Dimensions: 3.43 x 2.65 x 0.05 mm
Typical Applications
- Communications
- Radar
- Satcom
- EW
- Space communications
- Point to point communications
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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