TGA2573-2
2 - 18 GHz, 10 Watt GaN Amplifier
Qorvo's TGA2573-2 is a wideband, high power GaN HEMT amplifier fabricated on Qorvo's production 0.25-um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.
Fully matched to 50 ohm and with integrated DC blocking caps on both RF ports, the TGA2573-2 is ideally suited to support both commercial and defense related applications.
The TGA2573-2 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant.
Last Time Buy: December 9, 2020
Recommended replacements for new designs: TGA2962, QPA2962, QPA2966D
Contact your local sales representative for assistance.
Key Features
- Frequency range: 2 to 18 GHz
- PSAT: 40 dBm at VD = 30 V
- PAE: 20% typical
- Small signal gain: 10 dB
- Return loss: 15 dB
- Bias: VD = 30 V, IDQ = 500 mA, VG = 2.3 V typical
- Technology: 0.25-um GaN on SiC
- Dimensions: 2.55 x 5.54 x 0.1 mm
Typical Applications
- Communication Systems
- Electronic Countermeasures (ECM)
- Electronic Warfare
- Military Radar
- Test Equipment
- Multi-Band VSAT
Parameters
Technical Documents
Design Resources
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