TGA2583-SM
2.7 - 3.7 GHz, 10 Watt GaN Power Amplifier
Qorvo's TGA2583-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2583-SM is designed using Qorvo's production 0.25-um GaN on SiC process.
The TGA2583-SM typically provides 40.5 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions.
The TGA2583-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both commercial and defense related radar applications.
Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency Range: 2.7 - 3.7 GHz
- PSAT: 40.5 dBm
- PAE: >50%
- Small Signal Gain: 33dB
- Return Loss: > 12dB
- Bias: VD = 25 - 32 V (CW or Pulsed), IDQ = 175 mA, VG = -2.3 V typical
- Pulsed VD: PW = 100 us, DC = 10%
- Package Dimensions: 5.0 x 5.0 x 1.45 mm
Typical Applications
- Commercial Radar
- Military Radar
- Multi-Band VSAT
- Cellular Infrastructure Base Station
- Repeaters / Boosters / DAS
- EW Signal Jammers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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