TGA2594-HM
27 - 31 GHz GaN Power Amplifier
Qorvo's TGA2594-HM is a packaged power amplifier fabricated on Qorvo's 0.15um GaN on SiC process. Operating from 27 to 31 GHz, the TGA2594-HM achieves 36.5 dBm saturated output power with a power-added efficiency of 25%, and 25 dB small signal gain.
The TGA2594-HM is offered in a hermetically sealed 22-lead 7x7 mm ceramic QFN designed for surface mount to a printed circuit board. The package has a Cu base, offering superior thermal management. The TGA2594-HM is ideally suited to support both commercial and military applications.
Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Last Time Buy: December 4, 2023
Contact your local sales representative for assistance.
Key Features
- Frequency range: 27 - 31 GHz
- Pout: 36.5 dBm at PIN = 14 dBm
- PAE: 25 % CW
- Small signal gain: 25 dB
- IM3: -35 dBc @ 25 dBm Pout/tone
- Bias: VD = 20 V, IDQ = 140 mA, VG = -3 V typical
- Package dimensions: 7 x 7 x 1.3 mm
Typical Applications
- Military Satellite Communications (Satcom)
- Satellite Communications (Satcom)
- Point-to-Point Radio
- Point-to-Multipoint Radio
- Ka Band High Power Amplifiers
- VSAT
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteDefining What's Possible: The Path to 5G
BrochureQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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