TGA2622-CP
9 - 10 GHz, 35 Watt GaN Power Amplifier
Qorvo's TGA2622-CP is a packaged, high-power X-Band amplifier fabricated on Qorvo's QGaN25 0.25 um GaN on SiC production process. Operating from 9 to 10 GHz, the TGA2622-CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.
The TGA2622-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and CW conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The TGA2622-CP is ideally suited for both commercial and defense applications.
Lead free and RoHS compliant.
Key Features
- Frequency range: 9 - 10 GHz
- Pout: 45.5 dBm (PIN = 18 dBm)
- PAE: > 43% (PIN = 18 dBm)
- Power gain: 27.5 dB (PIN = 18 dBm)
- Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical (Pulsed: PW = 100 us, DC = 10%)
- Package dimensions: 15.2 x 15.2 x 3.5 mm
- Package base is pure Cu offering superior thermal management
Typical Applications
- Weather and Marine Radar
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication of Arctic Silver 5 Thermal Compound and Indium Shims for Qorvo CP-style Packaged Components
Application NoteQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
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