TGA2817-SM
2.9 - 3.5 GHz, 60 Watt S Band GaN Power Amplifier
Qorvo's TGA2817-SM is a high-power, S-band amplifier covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency.
The TGA2817-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The TGA2817-SM is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems.
Lead-free and RoHS compliant. Evaluation board available on request.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency range: 2.9 – 3.5 GHz
- Pout: > 48 dBm (at Pin = 24 dBm)
- Large signal gain: > 24 dB (at Pin = 24 dBm)
- PAE: > 54 % (at Pin = 24 dBm)
- Bias: VD = 28 V, IDQ = 200 mA, VG = -2.8 V (typ)
- Package dimensions: 7.00 x 7.00 x 0.85 mm
Typical Applications
- Commercial Radar
- Military Radar
- Wideband Power Amplifiers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication Note: Understanding Thermal Analysis of RF Devices
Application NoteQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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