TGF2023-2-01
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
Key Features
- Frequency range: DC to 18 GHz
- 38 dBm nominal Psat at 3 GHz
- 71.6% maximum PAE
- 18 dB nominal power gain at 3 GHz
- Bias: VD = 12 -32 V, IDQ = 125 mA
- Chip dimensions: 0.82 x 0.66 x 0.10 mm
Typical Applications
- Broadband Wireless
- Military
- Space
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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