TGF2023-2-02
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
Key Features
- Frequency range: DC to 18 GHz
- 40.1 dBm nominal Psat at 3 GHz
- 73.3% maximum PAE
- 21 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ= 50 - 250 mA
- Chip dimensions: 0.82 x 0.92 x 0.10 mm
Typical Applications
- Broadband Wireless
- Military
- Space
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication Note: Understanding Thermal Analysis of RF Devices
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
Need more support?
At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.
Forum
Engage with the Qorvo community, ask technical questions and share insights.
Support
Get technical, application or customer support plus updates on supply chain and FAQs.
Sales
Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.
