TGF2023-2-05
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-05 typically provides 43 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 78.3% which makes the TGF2023-2-05 appropriate for high efficiency applications.
The product is lead-free and RoHS compliant.
Key Features
- Frequency range: DC to 18 GHz
- 43 dBm nominal Psat at 3 GHz
- 78.3% maximum PAE
- 18 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ = 100-500 mA
- Chip dimensions: 0.82 x 1.44 x 0.10 mm
Typical Applications
- Broadband Wireless
- Military
- Space
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteApplication Note: Understanding Thermal Analysis of RF Devices
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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