TGF2023-2-20
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz.
The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 70.5% which makes the TGF2023-2-20 appropriate for high efficiency applications.
The product is lead-free and RoHS compliant.
Key Features
- Frequency range: DC to 14 GHz
- 50.5 dBm nominal Psat at 3 GHz
- 70.5% maximum PAE
- 19.2 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ = 400 - 2000 mA
- Chip dimensions: 0.82 x 4.56 x 0.10 mm
Typical Applications
- Broadband Wireless
- Military
- Space
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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