TGF2935
DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor
The Qorvo TGF2935 is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant.
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2933
Contact your local sales representative for assistance.
Key Features
- Frequency Range: DC - 25 GHz
- Output Power (P3dB): 4.8 W at 10 GHz
- Linear Gain: 16 dB typical at 10 GHz
- Typical PAE3dB: 60% at 10 GHz
- Typical NF at 10 GHz: 1.3 dB
- Operating voltage: 28V
- CW and Pulse capable
- 0.60 x 0.55 x 0.10 die
Typical Applications
- Defense and Aerospace
- Broadband Wireless
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
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