TGF2952
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz.
The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2933, TGF2023-2-02
Contact your local sales representative for assistance.
Key Features
- Frequency range: DC - 14 GHz
- 38.4dBm nominal Psat at 3 GHz
- 75.7% maximum PAE at 3 GHz
- 20.4dB nominal power gain at 3GHz
- Bias: Vd = 32V, Idq = 25mA
- Technology: 0.25 um power GaN on SiC
- Chip dimensions: 0.82 x 1.01 x 0.10 mm
Typical Applications
- Broadband
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochureGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
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