TGF2954
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Key Features
- Frequency range: DC - 12 GHz
- 44.5dBm nominal Psat at 3GHz
- 71.6% maximum PAE at 3 GHz
- 19.6dB nominal power gain at 3 GHz
- Bias: Vd = 32V, Idq = 100mA
- Chip dimensions: 0.82 x 1.68 x 0.10 mm
Typical Applications
- Broadband Amplifiers
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
Related Solutions
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