TGF2957
DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.6 % which makes the TGF2957 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2023-2-20
Contact your local sales representative for assistance.
Key Features
- Frequency range: DC - 12 GHz
- 48.6dBm nominal Psat at 3 GHz
- 69.6% maximum PAE at 3 GHz
- 19.2dB nominal power gain at 3 GHz
- Bias: Vd = 32V, Idq = 250mA
- Chip dimensions: 0.82 x 3.66 x 0.10 mm
Typical Applications
- Broadband Amplifiers
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochureGaAs and GaN Die Assembly and Handling Procedures
White Paper
Design Resources
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