TGF2977-SM
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Key Features
- Frequency range: DC - 12 GHz
- Output power (P3dB): 6.0 W at 9.4 GHz
- Linear gain: 13 dB typical at 9.4 GHz
- Typical PAE3dB: 50% at 9.4 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
Typical Applications
- Civilian Radar
- Military Radar
- Land Mobile Radio Communications
- Avionics
- Test Instrumentation
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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