TGF3021-SM
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
Key Features
- Frequency range: 30 MHz-4.0 GHz
- Output power (P3dB): 36 W at 2.0 GHz
- Linear gain: 19.3 dB typical at 2.0 GHz
- Typical PAE3dB: 72.7 % at 2.0 GHz
- Operating voltage: 32 V
- Low thermal resistance package
- CW and pulse capable
- 3 x 4 mm package
Typical Applications
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Radar
- Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteModelithics Qorvo GaN Library
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
- Load Pull Data
Load Pull Data
Load Pull Data - Non-Linear Model
Modelithics Non-Linear Model
Non-Linear Model - PCB Layout Files
Gerber PCB Layout Files
PCB Layout Files - S-Parameters
S-Parameters (32 V @ 75-150 mA)
S-Parameters - Video
Qorvo® Instructional Video: Understanding GaN Thermal Analysis
Video
Related Solutions
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