TGS2352-2
0.1 - 12 GHz, 20 Watt, High Power GaN SPDT Switch
Qorvo's TGS2352-2 is a single-pole, double-throw (SPDT) switch. It operates from DC to 12 GHz and is designed using Qorvo's 0.25um GaN on SiC production process. The device typically provides up to 20 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1 dB and high isolation of -35 dB typical.
The TGS2352-2 is ideally suited for high power switching applications.
The part is lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- Frequency range: DC to 12 GHz
- Input power: up to 20 W
- Insertion loss: < 1 dB
- Isolation: -35 dB typical
- Switching speed: < 35 ns
- Control voltages: 0 V / -40 V from either side of MMIC
- Dimensions: 1.15 x 1.65 x 0.1 mm
Typical Applications
- High Power Switching
- Radar
- Military Radio
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteRF Test and Measurement Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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