TGS2353-2-SM
0.5 - 18 GHz, 10 Watt, High Power GaN SPDT Reflective Switch
Qorvo's TGS2353-2-SM is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN.
Fabricated on Qorvo's 0.25um GaN on SiC production process, the TGS2353-2-SM operates from 0.5-18GHz and can switch up to 10W with low insertion loss and high isolation.
The TGS2353-2-SM performance allows it to be used in a variety of applications across commercial and military markets; low and high power.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Key Features
- SPDT, reflective
- Frequency range: 0.5 to 18 GHz
- Input power: up to 10 W
- Insertion loss: <1.5 dB
- Isolation: -30 dB typical
- Switching speed: <35 ns
- Control voltages: 0 V/-40 V
- Dimensions: 4.0 x 4.0 x 1.42 mm
Typical Applications
- Commercial Radar
- Communication Systems
- Electronic Warfare
- General Purpose
- Military Radar
- Test Instrumentation
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochureRF Test and Measurement Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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