TGS2355-SM
0.5 - 6 GHz, 100 Watt, High Power GaN Switch
Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo's QGaN25 0.25um GaN on SiC production process.
Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms.
The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration.
Lead-free and RoHS compliant.
Evaluation boards available on request.
Key Features
- Frequency range: 0.5 - 6 GHz
- Insertion loss: < 1.1 dB
- Power handling: 100 W (Pulsed)
- Return loss: > 15 dB
- Isolation: 40 dB typical
- Control voltages: 0 V/-40 V from either side of the MMIC
- Switching speed: < 50 ns
- Reflective switch
- Dimensions: 5.0 x 5.0 x 1.42 mm
Typical Applications
- Commercial Radar
- Electronic Warfare
- High Power Switching
- Military Radar
Parameters
Technical Documents
Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteHigh-Performance Defense and Aerospace Solutions
BrochureQorvo Field-Proven GaN Solutions
BrochurePCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout Files
Design Resources
Related Solutions
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