TQP0102
DC - 4 GHz, 5 Watt GaN Power Transistor
Qorvo's TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor.
The TQP0102 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell and active antenna systems. The TQP0102 can also be used as a driver in a macrocell base station power amplifier.
The wide bandwidth of the TQP0102 makes it suitable for many different applications from DC to 4 GHz. The TQP0102 can deliver PSAT of 5 Watts at 28 to 32 V operation.
Last Time Buy: September 13, 2021
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Key Features
- Frequency: DC to 4 GHz
- Output Power (P3dB): 37 dBm
- Linear Gain: > 19 dB
- Operating Voltage: 32 V
- Drain Efficiency: 68% at P3dB
- Package Dimensions: 3 x 3 mm QFN
Typical Applications
- Cellular Infrastructure
- General Purpose RF Power
- Radar
- Jammers
- Test Instrumentation
- Wideband Communications
- Narrowband Communications
Parameters
Technical Documents
Preliminary Product Data Sheet
Data SheetApplication Note: GaN Bias Circuit Design Guidelines
Application NoteApplication Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Application NoteBill of Materials
Bill of MaterialsQorvo Field-Proven GaN Solutions
Brochure
Design Resources
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